Kevin Jones
Professor
- Gainesville FL UNITED STATES
- Herbert Wertheim College of Engineering
Kevin Jones studies front-end processing of semiconductors.
Contact More Open optionsBiography
Kevin Jones is a distinguished professor who studies semiconductor processing and characterization. Kevin works with companies to understand how to continue to shrink devices. He also utilizes electron microscopy to research defects that arise during semiconductor processing. He is the chair of the International Committee on Ion Implantation Technology, which played a critical part in the making of modern transistors.
Areas of Expertise
Media Appearances
Increasing Social Literacy in Future Innovators
TED online
2020-10-01
In his talk, Kevin Jones, Ph.D. discusses how creating socially literate engineers can improve the successful impact of their innovations. Using his world-renowned Impact of Materials on Society course as a talking point, Jones encourages educators to equip engineering and non-engineering students with the tools needed to work in teams to create socially responsible engineering solutions.
Social
Articles
Strain and Defect Evolution of Si1-xGex/Si Heterostructures Grown by Pulsed Laser Induced Epitaxy
ScienceDirectJohnson, et al.
2022-08-01
The relaxation mechanism of Si1-xGex/Si heterostructures subjected to pulsed laser melting was investigated by probing the pulsed laser induced epitaxy (PLIE) regime of undoped 20 nm Si0.5Ge0.5/Si thin films.
Selective amorphization of SiGe in Si/SiGe nanostructures via high energy Si+ implant
Journal of Applied PhysicsTurner, et al.
2022-07-15
The selective amorphization of SiGe in Si/SiGe nanostructures via a 1 MeV Si+ implant was investigated, resulting in single-crystal Si nanowires (NWs) and quantum dots (QDs) encapsulated in amorphous SiGe fins and pillars, respectively.
The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins
ACS PublicationsThornton, et al.
2022-06-15
A recently discovered, enhanced Ge diffusion mechanism along the oxidizing interface of Si/SiGe nanostructures has enabled the formation of single-crystal Si nanowires and quantum dots embedded in a defect-free, single-crystal SiGe matrix. Here, we report oxidation studies of Si/SiGe nanofins aimed at gaining a better understanding of this novel diffusion mechanism.
