Volker Sorger
Professor | Assistant Director
- Gainesville FL UNITED STATES
- Herbert Wertheim College of Engineering
Volker Sorger studies photonics, optoelectronics, semiconductors, business development and public-private partnerships.
Contact More Open optionsBiography
Volker J. Sorger is the Rhines Endowed Professor for Semiconductor Photonics in the Department of Electrical and Computer Engineering and the director for business development in the Florida Semiconductor Institute. Volker coordinates semiconductor activities for the state of Florida, nationwide and transatlantic partnerships. Technical thrusts include AI/ML photonic accelerators, advanced packaging, optoelectronics, digital twins and aerospace flight test. He holds 28 U.S. patents and disclosures.
Areas of Expertise
Media Appearances
University of Florida to lead hub for $285 million semiconductor research institute
UF News online
2024-11-19
The University of Florida will lead one of seven regional hubs of a new, $285 million nationwide institute dedicated to advancing America’s semiconductor industry through next-generation simulations known as digital twins.
Social
Articles
Electrical programmable multilevel nonvolatile photonic random-access memory
Light: Science & ApplicationsMeng, et al.
2023-08-01
We demonstrate a multistate electrically programmed low-loss nonvolatile photonic memory based on a broadband transparent phase-change material (Ge2Sb2Se5, GSSe) with ultralow absorption in the amorphous state.
Photonic tensor cores for machine learning
Applied Physics ReviewMiscuglio & Sorger
2020-07-21
In this manuscript, we introduce an integrated photonics-based tensor core unit by strategically utilizing (i) photonic parallelism via wavelength division multiplexing, (ii) high 2 peta-operations-per-second throughputs enabled by tens of picosecond-short delays from optoelectronics and compact photonic integrated circuitry, and (iii) near-zero static power-consuming novel photonic multi-state memories based on phase-change materials featuring vanishing losses in the amorphous state.
Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits
Nature PhotonicsMaiti, et al.
2020-06-22
No efficient photodetector in the telecommunication C-band has been realized with two-dimensional transition metal dichalcogenide materials due to their large optical bandgaps. Here we demonstrate a MoTe2-based photodetector featuring a strong photoresponse (responsivity 0.5 A W–1) operating at 1,550 nm in silicon photonics enabled by strain engineering the two-dimensional material.
